Monday, 19 September 2016

Nanowave Technologies Announces New Compact X-band Synthesizer

High Coherence Source for X-band Sources for Radar Applications

20 September 2016, Toronto, Ontario: Nanowave Technologies, a leading designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, is announcing the release of a new X-band Synthesizer, the NWO0910-15, to complement existing line of synthesizers and direct digital synthesis products. Serving most X-band radar bands, this unit provides low phase noise, high coherence exciter frequencies to enhance radar performance. With sub-100 microsecond (µS) switching speeds, and small frequency steps, this unit is ideally suited for frequency agile radars that need to vary frequency from pulse to pulse. With an internal, temperature stabilized reference; the NWO0910-15 does not need to rely on an external reference for its outstanding performance.

The NWO0910-15 is an X-band source that can be used in any frequency from 9.0 to 10.0 GHz in frequency steps of 1 to 100MHz.  It exhibits better than -100dBc/Hz phase noise at 1kHz offset and coherence of -55 dBc typically. The internal reference is temperature stabilized to +1 ppm over the operating temperature range of -40°C to 85°C, ageing of less than 1ppm/yr and low g-sensitivity of 0.5ppb/g making the unit suitable for high vibration environments.

These cost effective sources are built with a proprietary dual-loop platform design that provides high performance frequency synthesis in a compact profile. The unit is ideal for portable designs where size and weight are at a premium.

Located in Toronto, Ontario, Nanowave Technologies, Inc. is a world-class designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems for Radar, Communications, and Space Applications. Nanowave Technologies was founded in 1992 on a mission to provide high reliability, cutting-edge RF solutions for the aerospace, defense, and space markets. Our systems maintain compliance to AS9100C and ISO9001:2008 and ITAR registration. Our facility encompasses all the core capabilities needed for end-to-end microwave electronic product development, redesign and life cycle maintenance. Learn more about Nanowave Technologies and these sources at 

Tuesday, 26 May 2015

Monday, 4 May 2015

CANSEC 2015 Show

NANOWAVE will be exhibiting on the CANSEC 2015 Show in Ottawa (Booth #223) starting May 27, 2015. Demos will be given on ultra low phase noise K-Band Synthesizer, ETF (Electronically Tunable Filters), and X-Band Synthesizer Technologies.

Click here for more details.

Tuesday, 7 April 2015

NANOWAVE announces high reliability, low phase noise, DDS based frequency synthesizers for RADAR applications

Low Phase-Noise Frequency Synthesizer and Oscillator
NANOWAVE Technologies offers high reliability, low phase noise, DDS based sources for airborne
and ground based RADAR platforms. The units leverage NANOWAVE's in-house high reliability
HMIC process and proprietary low phase noise synthesizer and oscillator capabilities. The source
module is customizable to full-band operation at L-, S-, C-, and X-bands.

The X-band unit provides 8–12 GHz continuous tuning bandwidth at a frequency step resolution less
than 1Hz. Phase noise of -110dBc/Hz at100KHz offset is achieved at 10GHz. Spurious signal levels
less than -55dBc at a 5MHz frequency step are guaranteed through 100% testing. All performance
parameters are achieved over an operational temperature range of -40 °C to +85 °C. All modules are
hermetically sealed for highest reliability.

The unit can be integrated with NANOWAVE Technologies FPGA-based intelligent converter
technology to provide a light weight, frequency agile transceiver platform suitable for advanced
airborne RADAR systems or ground-based applications.

Special Features:

• Full custom design
• Drop-In modules or stand-alone units
• External or Internal References
• Airborne Radar and Telecommunication Systems
• Terrestrial Radar Systems

Low Phase-Noise Full-Band Synthesizer Module
NWO0812-00 Low Phase-Noise L- and X-Band Synthesizer
Tuning Frequency Range:

Step Size:
Switching Speed:
Phase Noise:
Output Power:
Operating temperature:
8 to 12 GHz (full X-Band)
1 to 2 GHz (full L-Band)
< 1 Hz
< 30 µs
-110 dBc/Hz @ 100 kHz
-55 dBc @ 5 MHz step
> 10 dBm
-40°C to +85°C

Low Phase-Noise STALO Sub-System
NWO5557-17 C-Band Ground-Based RADAR STALO
Frequency Range:
Step Size:
Switching Speed:
Phase Noise:
Low Phase Noise Option:
Coherency 10Hz to 1MHz:
Output Power:
Operating temperature:
Weather resistant seal:
150 MHz within C-Band
1 MHz to < 1 Hz
< 50 µs
-120 dBc/Hz @ 100 kHz
-140 dBc/Hz @ 1 MHz
-60 dBc
-60 dBc @ 1 MHz step
< -50 dBc
> 23 dBm
0°C to +70°C

Sunday, 5 April 2015

OU and Nanowave Technologies Inc. Enter into Research Agreement


Norman, Okla.—The University of Oklahoma and Nanowave Technologies Inc. have entered into a research agreement that builds on an existing relationship with the Advanced Radar Research Center, located within the state‐of‐the‐art Radar Innovations Laboratory on the University Research Campus.

Thursday, 11 December 2014

NANOWAVE offers Electronically Tunable Filters for various applications

Specialized and Custom Designed RF Components and Subsystems
NANOWAVE Technologies' RF Components are designed to exceed customer expectations
of quality and performance. The Company's vertical integration of the manufacturing and
quality process allows us to turn around product quickly to meet customer demands. Our
vertical integrated capabilities also provide us with the flexibility to expedite unscheduled ramp
up of customer demands..
Electronically Tunable Filters (ETF)

Center Frequency:
3 dB Bandwidth:
Gain @ fc (typically):
Flatness cross 200 MHz:
Rejection Ratio:
Operating Temperature:
Control Interface:

Full Data Sheet available below!

5 to 10 GHz
190 kHz (customizable)
4 dB
< ± 2.5 dB
> 50 dBc
-20 to +60 °C
USB (customizable)
Cryogenically Cooled Low-Noise Amplifier
(for the Band 3 Rx of Atacama Large Millimeter Array (ALMA))

Noise Figure:
Noise Temperature:
Operating Temperature:
DC Power Consuption:

4 to 8 GHz
35 dB
< 1 dB
< 1 dB @ 25 °C
< 3.5 K @ 12 K ambient temp.
12 K
< 2 mW

Please contact for further information!

Below is a list of RF modules and active and passive components which are available
in both, sub-assembly level and as packaged modules.